IIHE invited seminar: Silicon Photomultiplier – characteristics and applications

by Dr Nicoleta Dinu (Laboratoire de l’Accélérateur Linéaire, Orsay, France & Laboratoire ARTEMIS, CNRS & Observatoire de la Cote d’Azur, Nice, France)

Friday 4 Mar 2016, 14:00 → 15:00 Europe/Brussels

Jean Sacton Seminar room (1G003) (IIHE, VUB)

abstract: The Silicon PhotoMultiplier (SiPM) is nowadays the latest generation of solid state detectors in silicon technology dedicated to visible light detection. In particular, at room temperature it can be used when multi-photon detection is involved and where low voltage operation, low power consumption, insensibility to magnetic field, small spatial resolution and compactness are required. Moreover, potential applications requiring single photon detection have become possible using SiPMs at low temperatures. The seminar will start with a detailed description of the SiPM working principle. Then, the main electro-optical characteristics will be discussed. In particular breakdown voltage, gain, dark count rate, photon detection efficiency, timing resolution of SiPM’s from various technologies will be shown. A particular attention will be given to thermal effects on SiPM parameters. The elements to take care when building large detection surfaces using SiPM's arrays will be mentioned too. The application of SiPM arrays in building a compact gamma camera used in medical imaging will be presented in detail. Physics applications will be also shortly addressed.

Slides Dinu_SiPM_Seminar_Brussels_Mars2016_5.pdf